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Samsung 2TB NVMe SSD 990 Evo Plus Series M.2 PCI-Express
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Χωρίς ΦΠΑ: 122,18 €
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Samsung 990 Evo Plus
Upgrade everyday performance
Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model.
Power efficiency
Power efficiency enhanced by 73% for more MB/s per watt, while maintaining performance and thermal control.
Versatility
Up to 4TB expanded capacity and rapid Intelligent TurboWrite 2.0 with enlarged TurboWrite region
Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.
Cool power through your day
Optimized efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73%, achieving the same power level and thermal control with less power consumption. Stay focused on work or play with no overheating or battery life worries.
Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.
Bringing innovations to life
For decades, Samsung’s NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.
Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimization tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.
| Κατασκευαστής | Samsung |
| Μοντέλο | 2TB NVMe SSD 990 Evo Plus Series M.2 PCI-Express |
| Part Number | MZ-V9S2T0BW |
| Κατηγορία | Δίσκοι SSD |
| Χωρητικότητα | 2TB |
| Interface | M.2. PCIe |
| Read Sequential | up to 7250MB/s |
| Write Sequential | up to 6300 MB/s |
| Total Bytes Written (TBW) | 1.2 PBW |
| Προτεινόμενη Χρήση | Everyday Use |
| PCI-Express Generation | PCI-Express Gen 5 - PCIe Gen 5.0 x2 / PCIe Gen 4.0 x4 |
| Λοιπά στοιχεία | Dimensions (WxHxD): 80.15 x 22.15 x 2.38mm Weight: Max 9.0g Weight Storage Memory: Samsung V-NAND TLC Controller: Samsung in-house Controller Cache Memory: HMB(Host Memory Buffer) Random Read (4KB, QD32): Up to 1,000,000 IOPS Random Write (4KB, QD32): Up to 1,350,000 IOPS Encryption Support: AES 256-bit Encryption (Class 0) TCG/Opal, IEEE1667 (Encrypted drive) Reliability (MTBF): 1.5 Million Hours Reliability (MTBF) Operating Temperature: 0 - 70 ℃ Operating Temperature Allowable voltage: 3.3 V ± 5% Allowable voltage Shock: 1,500 G & 0.5 ms (Half sine) Average Power Consumption (System Level): Read: 4.6W / Write: 4.2W Power Consumption (Idle, Typical): 60 mW Power Consumption (Device Sleep, Typical): 5mW |
| Εγγύηση | 5 Έτη |