Προϊόντα
Samsung 1TB NVMe SSD 990 Pro Series M.2 PCI-Express
Χωρίς ΦΠΑ: - €
Πληροφορίες
Δόσεις
The Ultimate SSD
Reach max performance of PCIe® 4.0. Experience longer-lasting, opponent-blasting speed. The in-house controller's smart heat control delivers supreme power efficiency while maintaining ferocious speed and performance, to always keep you at the top of your game.
PCIe 4.0 speed maximised
Huge speed boost. 40% and 55% faster random read/write speeds than 980 PRO - up to 1,200K/ 1,550K IOPS, while sequential read/write speeds up to 7,450/6,900 MB/s reach near max performance of PCIe® 4.0. Fly high in gaming, video and 3D editing, data analysis, and more.
Breakthrough power efficiency
More power-efficient performance. Higher performance usually consumes more power. 990 PRO uses less power with up to 50% improved performance per Watt over 980 PRO. This low-power design makes max PCIe® 4.0 performance possible with optimal power efficiency.
Smart thermal solution
Speed beyond the heat. The nickel-coated controller and cutting-edge thermal control algorithm manage heat for unwavering performance. The heat spreader label controls NAND chip heat, while Dynamic Thermal Guard keeps temperatures optimal.
The champion maker
The best gameplay experience. A more than 55% improvement in random performance enables faster loads for ultimate gaming realism on PS5 and DirectStorage PC games.
Samsung Magician software
Unlock the full power of 990 PRO. Samsung Magician software's user-friendly suite of optimisation tools always gets you the best SSD performance. Protect data, get updates, and monitor drive health. Your personal SSD toolkit.
Κατασκευαστής | Samsung |
Μοντέλο | 1TB NVMe SSD 990 Pro Series M.2 PCI-Express |
Part Number | MZ-V9P1T0BW |
Κατηγορία | Δίσκοι SSD |
Χωρητικότητα | 1TB |
Interface | M.2. PCIe |
Read Sequential | up to 7450MB/s |
Write Sequential | up to 6900 MB/s |
Total Bytes Written (TBW) | 600 TBW |
Προτεινόμενη Χρήση | Everyday Use |
PCI-Express Generation | PCI-Express Gen 4 |
Λοιπά στοιχεία | Interface: PCIe Gen 4.0 x4, NVMe 2.0 Storage Memory: Samsung V-NAND 3-bit MLC Cache Memory: Samsung 1GB Low Power DDR4 SDRAM Dimension: 80 x 22 x 2.3 mm (M.2 2280) Weight: 9.0g Weight Random Read/ Write Read (4KB, QD32): Up to 1,200,000 IOPS Write (4KB, QD32): Up to 1,550,000 IOPS Read (4KB, QD1): Up to 22,000 IOPS Write (4KB, QD1): Up to 80,000 IOPS Power Average Power Consumption (system level): 5.4 W, (7.8 W Burst mode) Power consumption (Idle): Max. 50 mW Allowable Voltage: 3.3 V ± 5% |
Εγγύηση | 5 Έτη |